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. 2023 Feb 25;16(5):1917. doi: 10.3390/ma16051917

Figure 2.

Figure 2

(a) The opening width of the etched tee-pee through a hole in 30 nm Cr mask ablated at different pulse energies Ep. Top-insets shows SEM image after Cr mask removal following a 10 min plasma etch. (b) Nano-structures formed below Cr mask in the under-etch region. Etched by SF6:CHF3:O2 at 5:1:1 flow rate ratio.