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. 2023 Feb 21;16(5):1781. doi: 10.3390/ma16051781

Figure 3.

Figure 3

The fabrication process of Al1−xScxN HBAR devices. (a) Mo/Al1−xScxN/Mo piezoelectric stack deposition, (b) Top Mo/Al1−xScxN patterning, (c) SiO2 isolation layer deposition and patterning, (d) Au contact layer deposition and patterning, (e) Top electrode Mo patterning.