TABLE 7.
FET-based DNA detectors.
| Type of affinity assay | Determination method | LOD | DLR | Ref |
|---|---|---|---|---|
| Silicon nitride on SiO2 Substrate | Ion-Sensitive FET/CMOS chemical sensing array operating in current mode for real-time ion imaging and detection of DNA amplification by Isothermal Loop-Mediated | 1.03 μA/pH | Miscourides et al. (2018) | |
| Graphene layer on SiO2/Si Substrate | FET/based on two-dimensional channel of a single graphene layer that can discriminate a single nucleotide polymorphism | 25 aM | 1 Am–100 fM | Campos et al. (2019) |
| ISFET chemical frame/Bio Chip | Ion-Sensitive FET/DNA amplification generates protons H+ proportional to the number of DNA copies by isothermal amplification | 16.7 mpH | 1–12 pH | Abdulwahab et al. (2018) |
| liquid exfoliated graphene | FET/Immunorecognition based on the glutaraldehyde modified liquid exfoliated graphene FET measured by current between the electrodes of drain and source | Sensitivity <3 | 1–106 pM | Zhang et al. (2019b) |
| 3D Graphene | FET/by introducing target miRNA affects the electrical potential of 3D-G and detection of miRNA | 100 pM | 100 pM–100 nM | Song et al. (2020b) |
| Graphene on SiO2/Si Substrate | FET/Trend of Dirac point shift by adsorption of single-stranded DNA studied | Dirac Voltage Shift 10 V | Yi et al. (2019) | |
| Graphene on SiO2 Substrate | FET/Back-gated G-FET-based on engineered hairpin probe DNA with improved sensitivity up to fM level | <10 fM | 1,000 nM–10 fM | Gao et al. (2018) |
| Graphene/Magnetic bead | G-FET/that uses clustered regularly interspaced short palindromic repeats technology to enable the digital detection of a target sequence | 1.7 fM | Hajian et al. (2019) | |
| Metal/SiO2/Ion-sensitive layer | MOSFET/detected DNA by changing dielectric constant and then obtaining its threshold voltage | 0.65 V | Goel et al. (2018) | |
| AlGaN/GaN on Si Substrate | Transistor/proposed an electrical double layer gated high electron mobility transistor as DNA sensor | 1 fM | 1 pM–10 fM | Chen et al. (2018) |
| Graphene/DNA tweezers probe | FET/Single nucleotide polymorphism sensitivity achieved by observing changes in Dirac point shift and resistance change | 100 pM | 10 uM to 100 nM | Hwang et al. (2018) |
| Single-walled carbon nanotubes (CNT) on SiO2 | FET/Developed floating electrode-based DNA sensor with controllable responses based on Langmuir theory | 100 fM | 1 nM–10 uM | Kim et al. (2012) |
| MoS2/Go/FET on Cu Substrate | FET/DNA detection by charge transfer through MoS2 between graphene and DNA | 10 aM | 10 aM–100 p.m | Chen et al. (2020) |
| AuNPs/single-walled carbon nanotube (SWCNT) on SiO2 | FET/DNA detection depend on the percolation paths of SWNTs in conduction channels | 100 fM | 0–1 nM | Dong et al. (2008) |
| CNT and graphene/PCB/PAN Probe | FET/reported array of Ion-Sensitive Field-Effect Transistors for detection of nucleic acid molecules | 1 nM | 1 Nm–1 μM | Ganguli et al. (2018) |
| Graphene layer with Pyrenebutanoic acid succinimidyl ester | FET/The negatively charged effect of DNA molecule used for FET/graphene-based DNA sensor. Non-covalent bonded DNA caused a “left” shift of the Dirac point | 3 nM | 1–32 nM | Guo et al. (2011) |
| Polycrystalline Si Nanowire | FET/enhanced FET sensitivity through using chimeric DNAs with methylated neutral nucleotides as probes | 0.1 fM | 0.1–10 fM | Hu et al. (2018) |
| Crumpled/flat graphene | FET Computational simulations reveal that deformed graphene could exhibit a change in band-gap, allowing an exponential change in the source-drain current from small numbers of charges | (600 zM) [crumpled 2 pM(flat)] | 10−3 M–10−20 M | Hwang et al. (2020) |
| CNT devices embedded in polymer substrates substrate | FET/CNT based flexible circuits for DNA sensors using Raman spectroscopy | 160 nM | Kang et al. (2008) | |
| Liquid coplaner Graphene FET | FET/Designed Liquid coplanar-gate graphene FET to detect and distinguish between single-stranded and double-stranded DNA molecules | 1 nM | 0–10 nM | Kim et al. (2018) |
| Graphene, PS Brush, SiO2, Si | FET/Used interfacial polymer brush layer, which is inserted between graphene and SiO2 to enhance the electrical properties of the sensor | 12-mer ssDNA10 | pM/μL | Ku et al. (2018) |
| Au electrodes/polymer substrate/PDMS/PMMA | MOSFET/developed a miRNA sensor using an electrical double layer gated FET biosensor with enhanced sensitivity and stability | 100 fM | 100–1,000 fM | Kuo et al. (2019) |
| CNT/aryldiazonium salts/Si Substrate | Designed single-point-functionalized CNTFETs have been used to sense conformational changes and binding events in nucleic acid structures from intrinsic molecular charge (Sp3 defects) | 20-mer target DNA | 100 nM | Lee et al. (2018) |
| Graphene/Au Gate/Glass substrate/Electrolyte | FET/The mechanism of this novel DNA sensor is that the gate potential drop is induced by DNA immobilization and hybridization on the Au gate electrode | 1 fM | 1 fM–5 μM | Li et al. (2019b) |
| Graphene/MoS2 heterostructures/on a sapphire substrate/Laser | Photoluminescence PL/characteristics of the grown graphene/MoS2 film are used for label-free and selective detection of DNA hybridization | 1 aM | 0.1∼1 fM | Loan et al. (2014) |
| MoS2/Si/SiO2 substrate/Ti and Au Electrode | FET/Developed label-free and direct hybridization assay using MoS2-FET biosensor for ultrasensitive detection of miRNA | 0.03 fM | 0.1 fM–10 nM | Majd et al. (2018) |
| MoS2/Phosphorodiamidate morpholino oligos (PMO) | FET/Developed PMO-modified MoS2 FET biosensor for detecting DNA based on PMO-DNA hybridization with high sensitivity and specificity | 6 fM | 10 fM–1 nM | Mei et al. (2018) |
| Graphene embedded nanochannel device/Theoretical DFT-NEGFT | Developed Graphene embedded nanochannel device that effectively controls the motion of nucleobases via p–p interaction and deciphers the ultrasensitivity of individual bases, one by one, in real time | Fano resonance-driven conductance of individual bases | Min et al. (2011) | |
| Si3N4/Al on Si/SiO2Ag/AgCl References electrode | CMOS FET/based on ion-sensitive field-effect transistor array using in-pixel quantization and compensation of sensor non-idealities | 3.2 μs/pH | 12.8 ns–33.1 ns | Moser et al. (2018) |
| Al2O3 film/aluminum Floating Gate electrodes/polyethylene terephthalate substrates | FET/presented electronic transduction of DNA hybridization by coupling OCMFETs and hairpin shaped probes | 100pM | 10 nM–10 pM | Napoli et al. (2018) |
| Si3N4/doped Si substrate/Si nanonets (SiNN)/nanowires | Si nanonet FET/reported field-effect silicon nanonet transistors for DNA sensing | 30/30 tested devices | Nguyen et al. (2019) | |
| Graphene/SiO2/Si substrate/Au/Cr electrode | FET/developed a COVID-19 FET sensor in which the SARS-CoV-2 spike antibody is conjugated to a graphene sheet, which is used as the sensing area | 2.42 × 102 copies/mL | 50–100 copies | Seo et al. (2020) |
| Fluorescence | FET/presented DNA sensor based on graphene and magnetic nanoparticles | 1 pM | 1 pM–10 nM | Sun et al. (2019a) |
| Carbon nanotube/Pd electrodes/SiO2 substrate | FET/a suspended CNT based FET was fabricated by utilizing the surface tension of liquid silver to suspend a CNT between two Pd electrodes for the detection of DNA hybridization | 10 aM | 1 pM–10 aM | Sun et al. (2019c) |
| Monolayer graphene/Ag/AgCl electrode/ITO glass substrate | G-FET/Using the graphene as the electric channel, fabricated G-FET sensor that can be used for detection of RNA | 0.1 fM | 0.1 fM to 1 pM | Tian, (2018) |
| Liquid exfoliated graphene/solution-gated FET/silver paste | FET/fabricated bioLEG-SgFETs and demonstrate their bio-application in single-strand DNA detection | 10 fM | 10-3-105 pM | Wang and Jia (2018) |
| Silicon wafer FET | FET/fabricated side-gated silicon nanowire FET was using complementary metal oxide semiconductor technology | 0.83 fM | 10 fM–10 nM | Wu et al. (2018) |