Table 3.
Plasma and wet etching of polyimide
| Author | Etchant | Etching rate (μm/min) | Aspect ratio | Sidewall angle (deg) |
|---|---|---|---|---|
| Dry etching | ||||
| Murakami et al. 105. | O2 | 4 | 15 | |
| .Fusao et al. 106,107 | O2 + N2 | >5 | >10 | |
| Bliznetsov et al. 108. | O2 + CF4 | 3.5 | Almost vertical | |
| Zawierta et al. 109. | O2 + CF4 + N2 | 0.86 | 8 | |
| Wet etching | ||||
| Lin et al. 184. | KOH + C2H7ON | 16 | ||
| Han et al. 119. | TPE3000 | 5 | <1 | 30 |
| Lena et al. 121. | NaOCl | ≈0.2 | 138 | |
| Zuzanna et al. 120. | NaOCl | 0.05 | 5.2 | 15 |
| Kristina et al. 122. | NaOCl | 0.35 | ≈6 | |