Fig. 4. (a) I–V characteristics of a printed MIS diode on both a semilogarithmic (left axis, black curve) and linear (right axis, red curve) scale. The average TiO2-NS thickness is 360 nm. The inset shows a sketch of the longitudinal section of the structure. (b) I–V characteristics of a nominally identical printed MIS diode but with an average TiO2-NS thickness of 170 nm. The inset shows the rectification ratio as a function of the modulus of the applied voltage for the two diodes with different TiO2-NS thicknesses. The active area of the diodes is approximately 200 μm × 100 μm.
