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. 2023 Mar 29;13(7):1211. doi: 10.3390/nano13071211

Table 1.

Select published results for irradiation-induced grain growth for pure Cu.

Purity Production/
Processing
Irradiation/
Annealing
Temperature
(°C)
Annealing
Time
(min)
Radiated
Particle
Particle
Energy
(MeV)
Dose
(dpa)
Flux
(dpa/s or ion/cm2.s)
Initial Grain Size (nm) Final Grain Size (nm) Reference
99.99% Sputter deposition 25 - He 0.3 1 1.4 × 10−4 dpa/s 19 222 [9]
400 He 0.3 1 19 242
400 He 0.3 5 19 422
NR Vapor deposition 450 - He 0.2 3 NR 20 60 [12]
NR Vapor deposition 450 - He 0.2 1.5 NR 14 31 [22]
99.999% Rolled and annealed sheet 400 - Cu 2.4 10 2.5 × 10−3 dpa/s 700 700 [23]
300,000 500,000
NR DC-magnetron sputtering 100 10 - - - - 43 59 [27]
100 180 43 81
100 300 43 104
300 60 43 127
500 60 43 330
99.95% DC-magnetron sputtering 300 60 - - - - 43 77 [28]
300 180 43 86
300 300 43 106
500 60 43 175
500 180 43 237
500 300 43 278
NR Sputter deposition −223 - Kr 0.5 2 2.5 × 1016 dpa/s 13 13 [31]
3 13 15
5 13 20
10 13 24
18 13 27
28 13 32
47 13 36
93 13 34
NR Sputter deposition 25 - Kr 0.5 2 2.5 × 1016 dpa/s 13 18 [31]
3 13 20
5 13 24
10 13 27
18 13 39
28 13 47
47 13 52
93 13 46
NR Sputter deposition 27 - Kr 0.5 1 2.5 × 1012 ions/cm2.s 13 17 [32]
3 13 20
5 13 24
10 13 28
18 13 37
27 13 39
45 13 47
64 13 53
90 13 46
99.999% Electrodeposition 70–100 - Neutron >1.98 0.0034 7.52 × 10−7 dpa/s 34 80 [34]
1 34 800
2 34 750
99.999% NR 70–100 Neutron >1.98 0.0034 7.52 × 10−7 dpa/s 38,000 39,000 [34]
- 1 38,000 37,000
2 38,000 49,000
NR Sputter deposition 25 Ar 0.2 2 * 1.88 × 1012, 6.25 × 1012, 3.57 × 1013 ion/cm2.s 15 24 [50]
4 * 15 27
8 * 15 31
13 * 15 34
- 16 * 15 36
25 * 15 44
32 * 15 48
45 * 15 52
64 * 15 52
76 * 15 52
NR Sputter deposition 25 - Kr 1.8 20 NR 112 547 [51]

* Calculated from fluence. NR: non-reported.