Table 1.

The optoelectronic parameters used for this numerical simulation study and investigation.

Materials/Parameters	ZnO:Al [30,31]	i-ZnO [30,32,33]	n-CdS [34,35]	p-CMTS [6]	p+-SnS [36]
Thickness, μm	0.20	0.05	0.05	0.8	0.1
Electron affinity, |e (eV)	4.6	4.4	4.4	4.35	4.1
Bandgap, Eg (eV)	3.3	3.3	2.42	1.20	1.6
Energy level w.r.t reference, (eV)	1.65	1.65	1.2	0.8	0.6
Dielectric constant, κ	7.8	7.8	8.28	7.6	13
Donor concentration, Nd (cm−3)	1 × 1020	1 × 1015	1 × 1017	–	–
Acceptor concentration, Na (cm−3)	–	–	–	1 × 1016	1 × 1019
Effective DOS of CB Nc, (cm−3)	2.2 × 1018	2.2 × 1018	1.7 × 1019	2.2 × 1018	1.18 × 1018
Effective DOS of VB, Nv (cm−3)	1.8 × 1019	1.8 × 1019	2.4 × 1018	1.8 × 1019	4.46 × 1018
Total bulk defect density, Nt (cm−3)	1 × 1014	1 × 1014	1 × 1016	1 × 1011	1 × 1016
Electron mobility, μn (cm2 V−1s−1)	160	160	350	0.16	15
Hole mobility, μp (cm2 V−1s−1)	40	40	50	0.16	100
Capture cross-section area of e, (cm2)	1 × 10−15	1 × 10−12	1 × 10−15	1 × 10−15	1 × 10−16
Capture cross-section area of h, (cm2)	1 × 10−15	1 × 10−15	1 × 10−15	1 × 10−15	1 × 10−16
Total interfaces defect density, Nt (cm−3)	neutral: 1 × 1011