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. 2023 May 9;8(20):17538–17551. doi: 10.1021/acsomega.2c06097

Table 2. Electronic Properties of the Modeled Systemsa.

structures HOMO(eV) LUMO (eV) Eg (eV) IP (eV) EA (eV) EFL (eV) η (eV) σ (eV) ω (eV) χ (eV)
Ga12As12 –7.899 –2.379 5.519 –7.899 –2.379 –5.139 –2.759 –0.362 –36.448 5.139
FenGa12As12 –4.865 –0.817 5.682 –4.865 0.817 –2.024 –2.841 –0.352 –5.822 2.024
ClenGa12As12 –4.976 –0.882 5.858 –4.976 0.882 –2.048 –2.929 –0.341 –6.135 2.047
BrenGa12As12 –4.9963 –0.8395 5.836 –4.996 0.839 –2.078 –2.918 –0.342 –6.302 2.078
Dic@Ga12As12 –7.902 –2.368 5.534 –7.902 –2.368 –5.135 –2.767 –0.361 –36.479 5.135
Dic@FenGa12As12 –5.034 –0.653 5.686 –5.034 0.653 –2.190 –2.843 –0.352 –6.821 2.190
Dic@ClenGa12As12 –4.618 –0.130 4.488 –4.618 –0.130 –2.374 –2.244 –0.446 –6.325 2.374
Dic@BrenGa12As12 –4.444 –0.067 4.376 –4.444 –0.067 –2.255 –2.188 –0.457 –5.566 2.255
a

Energy gap (ΔE, [eV]), ionization potential (IP, [eV]), electron affinity (EA, [eV]), chemical hardness (η, [eV]), chemical softness (μ, [eV]) chemical potential (μ, [eV]), electrophilicity (ω, [eV]), and electronegativity (χ, [eV]).