| 1D | One-dimension |
| 2D | Two-dimension |
| 3D | Three-dimension |
| Si | Silicon |
| UV | Ultraviolet |
| IR | Infrared |
| NIR | Near infrared |
| CMOS | Complementary metal-oxide-semiconductor |
| TMDs | Transition metal dichalcogenides |
| NEP | Noise equivalent power |
| Au NPs | Gold nanoparticles |
| rGO | Reduced graphene oxide |
| PhC | Photonic crystal |
| Quality factor | Q-factor |
| TOS | Tungsten oxyselenide |
| ns | Nanosecond |
| ps | Picosecond |
| fJ | Femto-joule |
| BP | Black phosphorous |
| R (λ, D) | Photo-responsivity (the incident light wavelength and the external biasing displacement field) |
| ORRAM | Optoelectronic resistive random-access memory |
| ANN | Artificial neural network |
| CVD | Chemical vapor deposition |
| FEO | Functional electrical optics |
| TENG | Triboelectric nanogenerator |
| vdW | van der Waals |
| TEM | Transmission electron microscopy |
| SEM | Scanning electron microscope |
| STM | Scanning tunneling microscope |
| FTIR | Fourier-transform infrared spectroscopy |
| SAET | Scanning atomic electron tomography |
| PTE | Photo-thermal emission |
| PTI | Photo-thermionic |
| Si-based ICs | Si-based integrated circuits |
| PDs | Photodetectors |
| QDs | Quantum dots |