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. 2023 May 17;14(5):1060. doi: 10.3390/mi14051060
1D One-dimension
2D Two-dimension
3D Three-dimension
Si Silicon
UV Ultraviolet
IR Infrared
NIR Near infrared
CMOS Complementary metal-oxide-semiconductor
TMDs Transition metal dichalcogenides
NEP Noise equivalent power
Au NPs Gold nanoparticles
rGO Reduced graphene oxide
PhC Photonic crystal
Quality factor Q-factor
TOS Tungsten oxyselenide
ns Nanosecond
ps Picosecond
fJ Femto-joule
BP Black phosphorous
R (λ, D) Photo-responsivity (the incident light wavelength and the external biasing displacement field)
ORRAM Optoelectronic resistive random-access memory
ANN Artificial neural network
CVD Chemical vapor deposition
FEO Functional electrical optics
TENG Triboelectric nanogenerator
vdW van der Waals
TEM Transmission electron microscopy
SEM Scanning electron microscope
STM Scanning tunneling microscope
FTIR Fourier-transform infrared spectroscopy
SAET Scanning atomic electron tomography
PTE Photo-thermal emission
PTI Photo-thermionic
Si-based ICs Si-based integrated circuits
PDs Photodetectors
QDs Quantum dots