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. 2023 May 29;14:3078. doi: 10.1038/s41467-023-38856-0

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — Differential resistance map of Device 1 as a function of I and B, with all three split gates set to a value of (a) −1.5 V, (c) −2.5 V, and (e) −4.1 V. The crosshairs shown by white dashed lines are at zero values of B and I. I–V characteristics for both bias directions at B = 0.04 mT, with all three split gates set to a value of (b) −1.5 V, (d) −2.5 V, and (f) −4.1 V, showing the reversal of the diode polarity.