Table 3.

Benchmark of some key parameters in Ga₂O₃ FETs on native and sapphire substrate

Material growth	Substrate	LGD (um)	ne (cm−3)	Vbr (V)		Reference
MOCVD (in-situ Si doping by TEOS)	Sapphire	9	6.5 × 1017	143 (298 K)	288 (423 K)	This work
			3.2 × 1028	474 (298 K)	487 (423 K)	This work
MOCVD (doping by Silane)	Sapphire	20	2 × 1018	390 (300 K)		[16]
MOCVD (doping by Silane)	Sapphire	20	1.05 × 1016	400 (300 K)		[5]
MOCVD	$\beta$-Ga2O3	6	3 × 1017	1200 (300 K)		[14]
MBE	$\beta$-Ga2O3	8	3 × 1017	400 (300 K)	370 (523 K)	[9]
MBE	$\beta$-Ga2O3	17.5	3.3 × 1013	51 (300 K)		[19]
HVPE	$\beta$-Ga2O3		1.2 × 1016	961 (300 K)		[20]

n_e: Carrier concentration in Ga₂O₃:Si thin films