Table 3.

Design parameters for all active layers.

parameters	FASnI3	PCBM	C60	Cu2O	CuAlO2	CuSCN	CuSbS2
thickness (nm)	300	150	150	150	150	150	150
bandgap Eg (eV)	1.41	2	1.7	2.17	3.46	3.4	1.58
electron affinity χ (eV)	3.9	3.9	3.9	3.2	2.5	2.1	4.2
dielectric permittivity	8.2	4	4.2	7.1	60	10	14.6
CB effective density of states (cm−3)	1018	1021	8 × 1019	2.5 × 1020	2 × 1020	2.5 × 1018	2 × 1018
VB effective density of state Nv (cm−3)	1018	2 × 1020	8 × 1019	2.5 × 1020	1 × 1022	1.8 × 1019	1 × 1018
electron mobility μn (cm2 Vs−1)	22	10−2	8 × 10−2	200	2	2 × 10−4	49
hole mobility μp (cm2 Vs−1)	22	10−2	3.5 × 10−3	8.6 × 103	8.6	2 × 10−4	49
donor density ND (cm−3)	0	1020	2.6 × 1017	0	0	0	0
acceptor density NA (cm−3)	7 × 1016	0	0	1019	1020	1017	1018