| Thickness (t) in nm |
500 |
70 |
350 |
165 |
— |
| Band gap (Eg) in eV |
3.5 |
3.5 |
1.59 |
2.9 |
— |
| Electron affinity (χ) in eV |
4 |
4 |
4.09 |
2.2 |
— |
| Dielectric permittivity (εr) |
9 |
9 |
6.6 |
3 |
— |
| CB effective density of states (Nc) in cm−3
|
2.2 × 1018
|
2.2 × 1017
|
2 × 1019
|
2.2 × 1018
|
— |
| VB effective density of states (Nv) in cm−3
|
2.2 × 1018
|
2.2 × 1017
|
2 × 1018
|
2.2 × 1018
|
— |
| Electron thermal velocity (Ve) in cm s−1
|
1 × 107
|
1 × 107
|
1 × 107
|
1 × 107
|
— |
| Hole thermal velocity (Vh) in cm s−1
|
1 × 107
|
1 × 107
|
1 × 107
|
1 × 107
|
— |
| Electron mobility (μe) in cm2 V−1 s−1
|
20 |
20 |
8.16 |
0.0001 |
— |
| Hole mobility (μh) in cm2 V−1 s−1
|
10 |
10 |
2 |
0.0001 |
— |
| Shallow uniform acceptor density (NA) in cm−3
|
0 |
0 |
1.3 × 1016
|
1.3 × 1018
|
— |
| Shallow uniform donor density (ND) in cm−3
|
1 × 1015
|
1 × 1015
|
1.3 × 1016
|
0 |
— |
| Defect density (Nt) in cm−3
|
1 × 1018
|
1 × 1018
|
4 × 1013
|
1 × 1015
|
— |
| Amphoteric defect density (ADD) in cm−3
|
— |
— |
2 × 1015
|
— |
— |
| Work function (φ) in (eV) |
— |
— |
— |
— |
5.3 |
