Table 1. Comparison of the OPD figures of merit for TQ-3T– and TQ-T–based devices.

Active layer	Eg (eV)	λonset (nm)	Jd (A cm−2)	D* (Jones)	R (A W−1)	Cut-off frequency (kHz)	LDR (dB)
TQ-3T:IEICO-4F	0.84	1470	2.3 × 10−6	1.03 × 1010 at 1200 nm	0.05 at 1200 nm	470 kHz	84 at 940 nm
TQ-T:IEICO-4F	0.67	1800	8.4 × 10−5	3.04 × 108 at 1200 nm	0.02 at 1200 nm	100 kHz	46 at 940 nm