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. 2023 May 26;23(11):5095. doi: 10.3390/s23115095

Table 5.

Read and write current of the cells.

SRAM Cell Read Current (nA) Variation Write Current (nA) Variation
C6T [20] 97.0769 12.81% 21.0656 −1.38%
S8T [21] 111.5110 24.09% 22.7555 6.15%
ST9T [22] 119.3510 29.08% 87.4934 75.59%
LP10T [22] 86.7418 2.42% 11.1768 −91.07%
MET11T [23] 112.8450 24.99% 10.0197 −113.13%
E2VR11T (proposed) 84.6452 - 21.3554 -