Fig. 5. Effect of biaxial lattice strain on the total DOS of a BAs bulk crystal. Notice the slightly larger band gap of BAs as compared to GaAs51 and the nearly similar valence (conduction) band low-in-energy lineshape between 15% (10%) strained BAs and the unstrained GaAs semiconductor.51 Also noteworthy is the resulting nearly linear V-shaped spectra at large strains, shown in the inset.
