Fig. 7. Effect of site-diagonal disorder in the As total DOS, for x = 0.1 and two different values of δ (two types of defects), for different values of biaxial strain from 5 to 25%. Notice the emergence of p- (lower panel) and n-type (upper panel) conductivity due to B-antisites (δ = 4.9 eV) and As-vacancies (δ = −2.3 eV), respectively. Noteworthy as well is the asymmetric V-shaped semimetal behavior in both panels.