Table 2.
Characteristic of PDL fabrication technique. (a) Direct writing based, (b) interference lithography-based manufacturing, and (c) lithography-based
| Description | Laser direct witting | Interference lithography | Lithography | |||
|---|---|---|---|---|---|---|
| Conceptual Figures | ![]() |
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| Patterning Resolution |
Tens of μm (pulse laser) Hundreds of nm (fs laser) |
Medium | Hundreds of nm | Medium | Tens of nm | High |
| Process Complexity | Single step process, ambient environment, tunable laser and optomechanical parameters | Low | Single step process, ambient environment, tunable laser and optomechanical parameters | Medium | Multi-stage process, mask preparation, chemical etching | High |
| Design Flexibility | Digital pattern easily converted actual | High | Low capability to change of design. Complex optical setup to achieve interference | Low | Pre-mask preparation to convert to design to actual | Medium |
| Productivity | Single-point processing | Low | Large area processing | High | Large area processing | High |
| Investment Cost | Small-area facility with low environmental requirement, simple pattering equipment setup | Medium | Small-area facility with low environmental requirement, complex opto-mechanical setup (to cater irregular pattern) | Medium | Multi-equipment setup with high environmental and chemical management | High |


