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OECTs. (a) Dimension-normalized source–drain current IDS* = IDS/(W × d/L) (left) and corresponding transconductance gm = gm/(W × d/L) (right, VDS = −0.7 V, VGS = +0.5 to −0.7 V), where W, d, and L are the width, thickness, and length of the channel. (b) Trajectory of μ and C* values upon varying VGS from +0.1 to −0.6 V; ΔV = −0.1 V. (c) Maximum volumetric capacitance Cmax* and (d) hole mobility μmax as a function of the CNF concentration (see Table 1 for the description of errors).
