Table 1. Electrical Properties of Doped Films Comprising Different Amounts of CNF^a.

	electrochemical doping				chemical doping
vol % CNF	Vth (V)	μC* (F cm–1 V–1 s–1)	Cmax* (F cm–3)	μmax (cm2 V–1 s–1)	σ (S cm–1)	Np (1026 m–3)	μF4TCNQ (cm2 V–1 s–1)
0	–0.20	135 ± 9	162 ± 10	0.83 ± 0.08	24.7 ± 0.3	0.7 ± 0.2	2.1 ± 0.6
3	–0.18	146 ± 15	160 ± 8	0.91 ± 0.10	24.8 ± 3.2	0.8 ± 0.2	2.1 ± 0.7
11	–0.17	123 ± 5	171 ± 11	0.72 ± 0.05	17.9 ± 0.1	1.0 ± 0.3	1.1 ± 0.3
20	–0.20	130 ± 8	197 ± 14	0.65 ± 0.06	19.5 ± 1.4	0.9 ± 0.3	1.4 ± 0.4

^aElectrochemical doping with OECTs (channel width W = 200 μm and channel length L = 20 μm) and EIS devices: threshold voltage V_th, the product of hole mobility and volumetric capacitance μC* from OECT transfer curves (mean and standard error of values extracted from 8–10 devices), maximum dimension-normalized volumetric capacitance C_max^* from EIS (mean and standard error of values extracted from 4 devices), and maximum hole mobility μ_max. Chemical doping with F₄TCNQ (20 mol % relative to the g₄2T-T repeat unit): electrical conductivity σ (mean and min–max error of three measurements of the same sample), polaron density N_p from analysis of UV–vis spectra (estimated error 30%), and charge-carrier mobility μ_F4TCNQ.