Figure 1.

Representative fabrication scheme and FSCV response of the BDDME. (A). Fabrication scheme of the BDDME using wafer processing technology, in which the BDD is grown, and insulating PCD is then utilized to encapsulate the BDD core. (B). Scanning Electron Microscope (SEM) image of the individual, free-standing BDDME showcasing a connection pad and electrode shank. (C). SEM image of a BDDME sensing tip, with a BDD core area of 123 µm² and polycrystalline diamond (PCD) encapsulation shell with a 15 µm thick layer. (D). Representative FSCV response of 10 µM 5-HT in aCSF at the BDDME with a flow rate of 750 µL min⁻¹, and an applied waveform of −0.4 V to 1.3 V to −0.4 V at 400 V s⁻¹ and 10 Hz repetition rate. Extracted current vs. time trace of the peak oxidation current (top) and cyclic voltammogram (bottom) showcase the electrochemical response of the BDDME when measuring 5-HT with the BDDME.