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. 2023 Jun 9;23(12):5482–5489. doi: 10.1021/acs.nanolett.3c00639

Figure 4.

Figure 4

Switching performance of bending structures. (a) ISW as a function of the pulse width (τp) in a bending structure (Bip = 0 mT) and straight structures (Bip of −8.2 and −12.8 mT along Φ = 0°). (b) ISW (direct current) as a function of Bz for the bending structure at Bip = 0 mT and straight structure at Bip = −15 mT for hard layer orientation +z (SAF-up) and −z (SAF-down).