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MOCVD for epitaxial 2D TMD semiconductors. (a) photo and (b) schematic of horizontal cold wall MOCVD reactor used for TMD growth. (c) Surface morphology of monolayer grown on 2” c-plane sapphire at center and edge of the wafer (locations indicated by + in photo). Room temperature (d) PL and (e) Raman spectra obtained at the center and edge of the wafer show spatially uniform monolayer thickness across the wafer.
