Parameters of TCO, ETLs, and absorber layer49.
| Parameters | TCO | TiO2 | CFTS | CsPbBr3 |
|---|---|---|---|---|
| Thickness (μm) | 0.5 | 0.03 | 0.1 | 0.8a |
| Band gap, Eg (eV) | 3.5 | 3.2 | 1.3 | 2.3 |
| Electron affinity, χ (eV) | 4 | 3.9 | 3.3 | 3.6 |
| Dielectric permittivity (relative), εr | 9 | 9 | 9 | 6.5 |
| CB effective density of states, NC (cm−3) | 2.2 × 1018 | 2 × 1018 | 2.2 × 1018 | 4.94 × 1017 |
| VB effective density of states, NV (cm−3) | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 8.47 × 1018 |
| Electron mobility, μn (cm2 V−1 s−1) | 20 | 20 | 21.98 | 4500 |
| Hole mobility, μh (cm2 V−1 s−1) | 10 | 10 | 21.98 | 4500 |
| Shallow uniform acceptor density, NA (cm−3) | 0 | 0 | 1 × 1018 | 0 |
| Shallow uniform donor density, ND (cm−3) | 1 × 1021 | 9 × 1016 | 0 | 1 × 1015 |
| Defect density, Nt (cm−3) | 1 × 1015a | 1 × 1015a | 1 × 1015a | 1 × 1015a |
a
In this study CsPbBr3 absorber layer's thickness makes a constant of 800 nm primarily also the constant defect density of 1 × 1015 cm−3 at the initial condition. After the optimization process begins then variation will perform.