Table 1. Photovoltaic Performance of ITO/SnOx/C60/MAPbI3/TaTm/TPBi/MoO3/Au Devices with the SnO2 ETL Deposited under Different PLD Chamber Pressures and Oxygen Concentrationsa.
| SnOx | JSC (mA cm–2) | VOC (V) | FF (%) | PCE (%) | Rs (Ω cm–2)b |
|---|---|---|---|---|---|
| PLD; Pchamber = 5 × 10–3 mbar; 40% O2 | 20.2 ± 0.7 | 1.09 ± 0.01 | 28 ± 4 | 5.1 ± 0.9 | 60 ± 8 |
| PLD; Pchamber = 5 × 10–3 mbar; 70% O2 | 21.0 ± 0.7 | 1.11 ± 0.01 | 70 ± 4 | 16.4 ± 0.8 | 11 ± 1 |
| PLD; Pchamber = 5 × 10–3 mbar; 100% O2 | 21.4 ± 0.3 | 1.11 ± 0.01 | 77 ± 1 | 18.1 ± 0.6 | 5.8 ± 0.7 |
| PLD; Pchamber = 8 × 10–3 mbar; 100% O2 | 21.1 ± 0.6 | 1.09 ± 0.01 | 65 ± 6 | 14.9 ± 1.6 | 5.8 ± 0.7 |
| ALD | 21.5 ± 0.3 | 1.11 ± 0.01 | 77 ± 1 | 18.2 ± 0.8 | 4.0 ± 0.8 |
a
Notation: average ± standard deviation. Number of samples: at least 16 samples for each SnOx.
b
Calculated from the voltage-independent region of the difference of the light and dark J–V curves using the method described by Grabowski et al.39