Table 2. Comparison of Experimentally Derived Parameters with Fitting Parameters of the Modeling for the Self-Gating Cells and DEME-TFSI IL^a.

DEME-TFSI	experiment		diode circuit model						drift-diffusion model				comments
self-gating cells	Rs	Rsh	Rs	Rsh	R1	Jsd	Jsd1	Irec	barrier	EEC	τn,psup	τn,pint
dry C60 (no IL)	1175	198	9.25	350	5000	0.19	0.9	6	0.33	4 × 10–4	2.5 × 10–12	1 × 10–11	b
wet C60 (self-charging)	32.3	300	20.5	350	500	0.142	4000	3	0.07	4 ×10–2	4.5 × 10–13	4.5 × 10–10	c
wet C60 (self-gating)	17.5	18761	9.25	1100	5	0.21	4000	2.4	0.03	4 × 10–2	7.3 × 10–13	2.8 × 10–11	d
dry C70 (no IL)	980	56	9.5	300	5000	0.22	0.24	0.6	0.43	4 × 10–4	2.5 × 10–12	1 × 10–11	e
wet C70 (self-charging)	29.3	245	17.5	300	2500	0.16	4200	0.4	0.07	4 × 10–2	2.8 × 10–12	2 × 10–11	f
wet C70 (self-gating)	18.1	1078	10	300	5	0.22	1800	0.4	0.01	3 × 10–2	2.8 × 10–12	1 × 10–11	g

^aThe parameters unit are same as those in Tables S2 and S3.

^bHigh experimental R_s of 1175 Ω × cm² correlates with R_s + R₁, reflecting big R_ct at interface and increase of small R_sh to wet correlates with increased Is_d1 leakage in the wet case.

^cExperimental R_s(wet) correlates now with better fitting R_s(wet) of DC-model and R₁ drops.

^dExperimental R_s(SG) further drops due to doping of CNT caused drop of R_s(CNT), which correlates with drop of R₁ by 2 orders.

^eChange of R₁ from dry to wet correlates with decrease of interface barrier (0.33 eV drop to 0.07 eV).

^fEEC of DD model improves upon wet self-charge by 2 orders, correlating also with barrier disappearance.

^gBarrier of DD model drops further (0.07 to 0.01 eV) upon self-gating, in correspondence with R_s (SG) drop in DC model.