Skip to main content
. 2023 Jun 19;10(8):nwad175. doi: 10.1093/nsr/nwad175

Figure 4.

Figure 4.

Electrical conductivity of tMLG with crystalline defects. (a) A current map obtained on a twisted 3 L/graphite sample (twist angle of 0.28° ± 0.03°) with a crystalline defect (i.e. a dislocation). Scale bar, 50 nm. (b) A line profile of the current signal obtained along the white dashed line in panel (a). (c) A schematic diagram showing the twisted 3 L/graphite sample with a dislocation within the topmost graphene layer; the dislocation causes a transformation from the initial ABA-stacking to ABC-stacking (panel (i)); the schematics show the idealized stacking structures within Region-1-H, Region-1-L, Region-2-H and Region-2-L (panel (ii)). (d) Conductivities of the four types of domains from experiments, as well as the theoretical predictions from the SSR model with idealized stacking configurations. The conductivities are normalized by the conductivity value of Region-1-H. (e) Conductivity maps calculated using the SSR model with LRI based on the real atomic structures of the twisted ABC-stacked trilayer graphene/graphite (left panel) and the twisted ABA-stacked trilayer graphene/graphite (right panel) systems from MD simulations. Scale bars, 50 nm.