Skip to main content
. 2023 Jul 7;127(28):13651–13658. doi: 10.1021/acs.jpcc.3c02933

Table 1. Summary of Reported Nucleation Delay for Ru PE-ALD in the Literaturea.

references substrates metal precursor plasma type temperature K nucleation delay
Swerts et al.29 TiN/Si wafer (MeCpPy)Ru N2/H2 or N2/NH3 323 <10 ALD cycles
TiN/Si wafer Ru(EtCp)2 N2/H2 323 ∼120 ALD cycles
TiN/Si wafer Ru(EtCp)2 N2/NH3 323 >500 ALD cycles
Swerts et al.35 SiO2 (MeCpPy)Ru N2/NH3 603 ∼120 ALD cycles
TiN/Si wafer (MeCpPy)Ru N2/NH3 603 ∼50 ALD cycles
Xie et al.30 TaN/Si wafer Ru(EtCp)2 NH3 543 ∼50 ALD cycles
Kwon et al.36 TiN/Si wafer Ru(EtCp)2 NH3 543 <10 ALD cycles
a

No data of nucleation delay for Co PE-ALD in the literation was found.