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. 2023 Jul 7;127(28):13651–13658. doi: 10.1021/acs.jpcc.3c02933

Table 3. Computed Adsorption Energies of Metal Precursors RuCp2 and CoCp2 with Horizontal and Upright Binding Modes on SiNx/Si(100), H:SiNx/Si(100), and Bare Si(100) Surfaces.

  RuCp2 Ead/eV CoCp2 Ead/eV
(3 × 3) horizontal horizontal
H:SiNx/Si(100) –0.47 –0.76
SiNx/Si(100) –0.53 –1.74
bare Si(100) –5.87 –6.07