Fig. 3. (a) The schematic image of an on-state SWCNT-TFT as printed. (b) Ambipolar device's cross-sectional schematic image of the on-state SWCNT-TFT with the doping mechanism of fixed positive charge generated by the Al2O3 layer. (c) n-Type device's cross-sectional schematic image of the on-state SWCNT-TFT. (d)–(f) The band diagrams respectively for p-type, ambipolar and n-type SWCNT-TFTs.
