Figure 4.

a) Grazing incidence X‐ray diffraction (GIXRD) spectra of the pristine SnO₂ and PAPT‐modified SnO₂ films. b) I–V curves of the devices based on the FTO/SnO₂/Au structure for evaluating the conductivity of the pristine SnO₂ and PAPT‐modified SnO₂ films. c) Hall mobility and carrier concentration results of the pristine SnO₂ and PAPT‐modified SnO₂ films. d) Steady‐state PL spectra and e) Time‐resolved PL (TRPL) spectra of the perovskite films on glass, the pristine SnO₂ and PAPT‐modified SnO₂ films. f) Dark J–V characteristics of the electron‐only devices based on different SnO₂ layer. (The device structure: FTO/SnO₂/perovskite/PCBM/Ag).