Table 1.
Inset parameters of the PC1D simulation tool.
| Parameters | CdSe20 | ZnSe75 |
|---|---|---|
| Thickness | 0.6–3 μm | 30–100 nm |
| Energy bandgap (eV) | 1.7 | 2.7 |
| Electron Affinity | 4.56 | 4.09 |
| Bulk recombination | 100 μs | 100 μs |
| Doping concentration | 1 × 1016–1 × 1020 cm−3 | 1 × 1016–1 × 1020 cm−3 |
| Excitation mode | Transient | Transient |
| Electron mobility | 650 (cm2/vs) | 50 (cm2/vs) |
| Hole mobility | 50 (cm2/vs) | 20 (cm2/vs) |
| Constant Intensity | One sun | One sun |
| Dielectric constant | 10.6 | 9.2 |
| Temperature | 300 K | 300 K |
| Constant Intensity | 0.1 W/cm−2 | 0.1 W/cm−2 |
| Primary light source | AM 1.5 D spectrum | AM 1.5 D spectrum |
| Other parameters | Internal PC1D | Internal PC1D |