Fig. 15. GNWs-based photoconductive detectors. (a) and (b) Schematic diagram of optoelectronic detector device structures using GNWs on different Si substrates; (c) photoresponse of the three devices; Copyright © 2020 Elsevier Ltd. All rights reserved. (d) Schematic diagram of the VOG/Ge heterojunction photodetector. (e) UV-NIR absorption spectra of VOG/Ge and GQDs/VOG/Ge. (f) Photoresponse properties of the GQDs/VOG/Ge device under irradiation with light of 1550 nm with variable light intensities. The applied bias is 1 V. Copyright © 2020, American Chemical Society.
