Fig. 16. GNWs-based photoconductive detectors. (a) and (b) Device structure and energy band diagram of photoconductive devices prepared by growing GNWs on SnO2 film; (c) photoresponse performance of SnO2/GNWs devices; Copyright © 2018 Elsevier B.V. (d) Schematic diagram of FET device structure directly grown GNWs on SnO2 insulating layer substrate using PECVD; (e) photocurrent (Iph) of the GNWs photodetector at various gate voltages; (f) time-dependent Iph measurements of the GNWs photodetector and MLG photodetector working at their respective Dirac point voltage under the illumination of a 1550 nm laser, VSD = 100 mV. Reprinted with permission from120 Copyright © The Optical Society.
