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. 2023 Jul 22;13(14):2132. doi: 10.3390/nano13142132

Figure 2.

Figure 2

(a) Transconductance (gm) and linear scales of the drain current (Ids) as a function of gate-source voltage (Vgs). (b) Logarithmic scales of drain current (Ids) as well as the gate current of (Igs) according to the Vgs of the measured AlGaN/GaN nanowire WGT at Vds = 0.1 V.