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Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
(a) Transconductance (gm) and linear scales of the drain current (Ids) as a function of gate-source voltage (Vgs). (b) Logarithmic scales of drain current (Ids) as well as the gate current of (Igs) according to the Vgs of the measured AlGaN/GaN nanowire WGT at Vds = 0.1 V.