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. 2023 Jul 31;13:12381. doi: 10.1038/s41598-023-39347-4

Figure 5.

Figure 5

(a) Topograms of SiC (2–210) and (0–2210) diffraction integrated from depths of 28–41 μm below the surface. (b) 3D volume rendering topogram of the bottom of a stacking defect and topogram integrated from depths of 28–41 μm.