Comparison of previous works using CsSnI₃ as the absorber material and this work^a.

Type	Device structure	V OC (V)	J SC (mA cm−2)	FF (%)	PCE (%)	Ref.
1	FTO/TiO2/CsSnI3/Au	0.34	20.63	54.18	3.83	27
1	ITO/TiO2/CsSnI3/Spiro-OMeTAD/Au	0.86	23.20	65.00	12.96	16
1	FTO/TiO2/CsSnI3/m-MTDATA/Au	0.24	22.70	0.37	2.02	76
2	ITO/NiOx/CsSnI3/PCBM/Al	1.19	17.29	55.27	11.41	77
2	ITO/TiO2/MASnI3/Spiro-OMeTAD/Au	0.88	16.80	0.42	6.40	80
2	ITO/PCBM/CsSnI3/NiO2/Al	0.52	10.21	62.50	3.31	78
2	ITO/PCBM/CsSnI3/CuI/Au	0.91	14.24	78.11	10.10	50
2	ITO/PCBM/CsSnI3/CFTS/Se	0.87	33.99	83.46	24.73	b

^aNote: 1- experimental, 2- theoretical.

^bThis work.