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. 2023 Mar 9;18(1):36. doi: 10.1186/s11671-023-03775-y

Table 3.

Summary of the switching performance of 2D-Based RRAM devices [197, 231, 256285]

2D-Material Device Structure Operation Voltage (VSET, VRESET)V ON/OFF (ratio) Endurance (cycles) Refs.
Graphene and its derivatives Pt/GO/Pt 2.5, −0.5 104 102 [257]
ITO/rGO/ITO 2.0, −2.0 NS 105 [258]
ITO/Graphene-ZnO/ITO 1.0, −2.5 7000 100 [259]
Cu/GO/Pt 1.0, −1.0 NS NA [260]
Al/GOZNs/ITOPET 2.0, −2.0 102 102 [261]
Al/GO-AuNPs/ITO 1.0, −1.0 105 102 [262]
Ni/PMMA-GO/ITO 1.0,−1.0 103 104 [263]
Au/PVP-Graphene/ITO 2.0, −3.0 5 20 [264]
MXenes Ag/MXene/SiO2/Pt 0,2, −0.2 103 NA [265]
Cu/MXene/SiO2/W 0.6, −1.9 NS NA [266]
Ag/Ti3C2/Pt 3.0, −3.0 22 ×104 500 [267]
Pt/Ti3C2/Pt 3.0, −3.0 3 ×104 103
Al/Ti3C2/Pt 3.0, −3.0 6×104 103
Al/Ag/MXene/MXene/ITO 1.6, −2.0 103 NA [268]
Hexagonal boron nitride (hBN) Ag/hBN/ITO/PET 0.72, −0.37 100 750 [269]
Al/Ti/TiOx/multilayer hBN/Cu 0.6, −0.4 5 NS [270]
Ti/thick h-BN/Cu 0.7, −0.7 104 >600 [271]
Ti/thin h-BN/ITO 0.5, −0.3 10 >180
Ti/MLG/thin h-BN/MLG/Au 2.3, −0.6 103 >450
Ti/hBN/Au 1.5, −1.5 103 1200 [272]
Transition-metal dichalcogenides (TMDs) Ag/WSe2/Ag 0.7, −0.3 103 NA [197]
Al/WS2/Pt/Ti/SiO2/Si 1.62, −1.45 103 NS [231]
Al/WSe2/Pt 1.62, −1.45 103 102 [256]
Cu/MoS2/W2N 2.1, −2.2 103 103 [271]
Ti/Ni/MoTe2/Ti/Au 1.8, −1.8 10 102 [272]
Al/MoS2/ITO 2.17, −1.62 102 104 [273]
Ag/MoS2/ZnO/Ti 0.75,−0.75 2 102 [274]
Ag/MoSe2/Au 2.6,−3.0 50 102 [275]
Ag/MoSe2-doped-Se/Ag 3.0,−3.0 102 500 [276]
Ag/MoSe2/Ti 2.2, −2.6@500K 10 NA [277]
Ag/WS2/Ag 2.3,−2.3 103 102 [278]
Ag/WSe2/Ag 0.5, −0.3 103 90 [279]
Ti/MoTe2/Au 2.3, −1.5 50 NS [280]
Black Phosphorus (BP) AI/PFCz-g-BPQDs/ITO -1.95, -0.89 1.3×107 600 [232]
(PET)/Au/BPQD-PVP/Ag 2.8, −1.2 6.0×104 500 [281]
Al/BP:PS/Al 1.75, −1.25 102 NA [282]
Ti3C2/BP/Ti3C2 1.5, −0.5 105 NA [283]
ITO/BP@PS/ITO −0.5, 2.0 100 NS [284]

VSET: SET voltage, VRESET: RESET voltage, B: bipolar, NA: data not available and NS: not specified