Table 3. Photovoltaic Properties of the Simulated Device with the Modified Properties.
| parameter modified | Voc (V) | Jsc (mA/cm2) | FF (%) | PCE (%) | doping density (× 1016 cm–3) | μe (cm2/Vs) | RS (Ω) | thickness (μm) |
|---|---|---|---|---|---|---|---|---|
| baseline | 1.07 | 3.55 | 71 | 2.7 | 24.6 | 0.08 | 30 | 0.7 |
| ND decrease | 1.12 | 4.92 | 69 | 3.81 | 1.0 | 0.08 | 30 | 0.7 |
| Rs decrease | 1.12 | 4.96 | 77 | 4.28 | 1.0 | 0.08 | 3 | 0.7 |
| μe increase | 1.12 | 5.04 | 80 | 4.53 | 1.0 | 0.3 | 3 | 0.7 |
| double thickness | 1.13 | 5.51 | 79 | 4.90 | 1.0 | 0.3 | 3 | 1.4 |