FIG 6.
Growth phenotypes of ΔVdR3e-HoMCLT, ECVdR3e-HoMCLT, and OEVdR3e-HoMCLT strains. (A) Observations of the ΔVdR3e-HoMCLT, ECVdR3e-HoMCLT, and OEVdR3e-HoMCLT conidia of the ΔVdR3e-HoMCLT, ECVdR3e-HoMCLT, and OEVdR3e-HoMCLT strains by scanning electron microscope. Scale bars, 2 μm. (B) Analysis of effects of VdR3e on the utilization of different carbon sources by HoMCLT and the growth of HoMCLT under stress. The conidial suspensions of V. dahliae strains were prepared at a concentration of 5 × 106 conidia/mL. Then, 2-μL conidial suspensions were cultured on different carbon sources and different media containing stressors at 25°C. The growth phenotype was photographed 7 days later. HoMCLT (WT) was used as a control. Two separate transformants were characterized for each mutant. (C) Effect of VdR3e on the penetrating ability of HoMCLT. The mutant strains were cultured in cellophane-lined minimal medium to simulate penetration of cell walls. The mutant strain was cultured on cellophane-lined minimal medium for 3 days. After the 3-day period, the cellophane was removed, and the culture continued. The growth phenotype was photographed after 5 days. Two separate transformants were characterized for each mutant.