Figure 4. Convergent-beam electron diffraction (CBED) simulation with thermal diffuse scattering.
( a)–( b) Calculated CBED patterns for Si[100] at 100 keV with an aperture of 9.4 mrad. ( a) Calculated using molecular dynamics (MD) and ( b) calculated using an Einstein model. In ( a) more of the higher order disks are visible. ( c)–( d) The rotationally averaged electron diffraction patterns for Si[100] at 100 keV.