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. 2023 Jul 19;620(7975):756–761. doi: 10.1038/s41586-023-06264-5

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Extended Data Fig. 7 — a, Typical C(n) at 0.6 T (bottom black curve), 5.1 T (middle blue curve) and 12 T (top red curve), respectively, in capacitor device D6 at T = 0.3 K. Bottom insets are magnifications of the marked areas. b, DoS vs U₁ at 5.1 T, 0.3 K. c, Surface Landau fan diagram C (n, B) at 0.3 K. Colour scale: navy to white, 254.7 fF to 270.0 fF. Dashed line marks the critical field B = 7.5 T, where bulk Landau band 2⁺ leaves the Fermi level and graphite enters the UQR. d, Dispersion relation for bulk Landau bands calculated using the SWMC model at B = 7.5 T²⁶.