Extended Data Fig. 5. Existence of fractal states throughout the bulk.

a, σ_xx(n_t, n_b) of device D2 as a function of top and bottom gates, n_b and n_t, measured at high field B = 15.6 T, T = 0.3 K, colour scale: brown to yellow, 0 to 59 μS. b, Wannier diagram depicting the QHE and fractal QHE gaps in the bulk as diagonal grey and purple lines, respectively. High doping for top (bottom) gate results in horizontal (vertical) features that correspond to surface states accessing the +2 and −2 Landau bands from the opposite graphite surfaces (highlighted by orange shading). c, σ_xx(n_t, n_b) of device D3, measured at high field B = 13.6 T, T = 0.3 K, colour scale: brown to yellow, 0 to 98 μS. d, The same as b but for D3.