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. 2023 Aug 24;14:5173. doi: 10.1038/s41467-023-40714-y

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Schematic diagram of the device measurement setup. b Optical micrograph of a Hall bar device for electric measurement. c R_xy–H_z curves at different temperatures in 8 nm Bi₂Te₃. The left inset shows the schematic of the band structure, and the right inset shows the temperature-dependent carrier density. d Normalized remnant anomalous Hall resistance and coercivity as a function of temperature in pure FGT, which displays the Curie temperature is ~220 K. e R_xy as a function of in-plane field H_x at different temperatures in Bi₂Te₃(8)/FGT(3) heterostructure, which displays the perpendicular magnetic anisotropy. f Curves of saturation magnetization M_s at different temperatures in Bi₂Te₃/FGT heterostructure. The right inset displays the Kerr signal of the heterostructure at 300 K, and the left inset displays the crystalline quality by HAADF-STEM image.