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. 2023 Aug 24;14:5173. doi: 10.1038/s41467-023-40714-y

Fig. 5. SOT efficiency characterization and current-induced room-temperature switching in Bi2Te3/Fe3GeTe2(4) heterostructures.

Fig. 5

a Illustration of the concept of charge-spin conversion via bulk state and topological surface states. b The SOT efficiency (ξDL) at different temperatures and thicknesses, showing the enhanced SOT switching from the topological surface state. The error bars denote the standard deviation of multiple measurements. c Current-induced magnetization switching under ±2 kOe at room temperature.