Fig. 2.

Activation entropy due to the thermal strain. (A) Activated energy calculated at zero-temperature strain ${\mathit{\epsilon }}_0$ and corresponding finite-temperature strain ${\mathit{\epsilon }}_{\mathrm{T}}$. The inset diagram schematically shows the thermal strain caused by temperature increase with the same applied stress ${\mathit{\tau }}_{\text{app}}$. (B) Estimated rates using HTST (Eq. 4) with the activation energy and prefactor evaluated at ${\mathit{\epsilon }}_0$ and ${\mathit{\epsilon }}_{\mathrm{T}}$. The benchmark average MD rates are shown as the stars (see SI Appendix, Text VII for the statistical analysis of the MD simulations).