Skip to main content
. 2023 Aug 5;123(16):9982–10078. doi: 10.1021/acs.chemrev.3c00139

Table 1. Electrical Properties of Representative Electrode Materials.

materials synthesis method dimension electrical properties ref
Ultrathin Film (Wetting Layer)
ZnO/Ag/ZnO RF and DC sputtering thickness: 20/6/20 nm sheet resistance: 3 Ω sq–1 (14)
TiO2/Ag/TiO2 RF and DC sputtering thickness: 30/9.5/30 nm sheet resistance: 5.7 Ω sq–1 (15)
WO3/Ag/WO3 thermal evaporation thickness: 30/12/30 nm sheet resistance: 7.22 Ω sq–1 (16)
ITO/Ag/ITO RF and DC sputtering thickness: 55/14/55 nm sheet resistance: 4 Ω sq–1 (17)
MoO3/Ag/MoO3 RF and DC sputtering thickness: 20/7.5/20 nm sheet resistance: 8 Ω sq–1 (18)
Ultrathin Film (Doping)
Mg0.28Zn0.72O/Ag/Mg0.28Zn0.72O RF sputtering and E-beam Eevaporation thickness: 50/14/50 nm sheet resistance: 6.36 Ω sq–1 (19)
AZO/Ag/AZO E-beam evaporation thickness: 25/11/25 nm sheet resistance: 5.34 Ω sq–1 (20)
Ultrathin Film (Metal Seed Layer)
Ag/Ge/SiO2/Si E-beam evaporation thickness: 10/2/100 nm sheet resistance: 20 Ω sq–1 (21)
Ag/Ge E-beam evaporation thickness: 100/1 nm resistivity: 2.58 μm cm (22)
Ag/Ti RF sputtering thickness: 6 μm/5 nm sheet resistance: 0.023 Ω sq–1 (23)
Ag/Al thermal evaporation thickness: 6/1 nm sheet resistance: 19.5 Ω sq–1 (24)
Metal Nanomaterial
AgNW chemical reduction diameter: 100–150 nm sheet resistance: ∼9 Ω sq–1 (8)
    length: >500 μm    
          
AgNW chemical reduction diameter: 40–100 nm sheet resistance: ∼8 Ω sq–1 (25)
    length: ∼10 μm    
          
AgNP chemical reduction diameter: 14 ± 3 nm sheet resistance: 9 ± 0.8 Ω sq–1 (26)
AgNP chemical reduction diameter: <10 nm sheet resistance: 30 Ω sq–1 (27)
          
CuNW chemical reduction diameter: 80–120 nm sheet resistance: 37 Ω sq–1 (28)
    length: ∼50 μm    
          
CuNW chemical reduction diameter: ∼46 nm sheet resistance: 52.7 Ω sq–1 (29)
    length: 37.7 μm    
          
CuNP chemical reduction diameter: ∼40 nm sheet resistance: 16.22 Ω sq–1 (30)
CuNP chemical reduction diameter: ∼40 nm sheet resistance: 4.7 Ω sq–1 (31)
          
AuNW (mesh) chemical reduction thickness: 193.7 ± 67.6 nm sheet resistance: 130.1 Ω sq–1 (32)
    pore size: 8–52 μm    
          
AuNP chemical reduction diameter: 3.2 nm sheet resistance: 150 Ω sq–1 (33)
Carbon-Based Nanomaterial
single-layer graphene mechanical exfoliation lateral size: 10 μm electron mobility: 10000 cm2 V–1 S1– (34)
single-layer graphene/multilayer graphene LPCVD 0.335 nm for 1 layer electron mobility: ∼4050 cm2 V–1 S–1 (35)
          
single-layer graphene/multilayer graphene APCVD 0.335 nm for 1 layer sheet resistance: 1150–220 Ω sq–1 (36)
      electron mobility: 602.4–450.8 cm2 V–1 S1–  
          
single-layer graphene/multilayer graphene PECVD 0.335 nm for 1 layer sheet resistance: 2661 Ω sq–1 (37)
SWCNT blown aerosol CVD thickness: ∼500 nm sheet resistance: 40 Ω sq–1 (38)
          
SWCNT aerosol CVD diameter: 1.3–2.0 nm sheet resistance: 84 Ω sq–1 (39)
    length: 1–5 μm    
          
MWCNT CVD diameter: <100 nm sheet resistance: 450 Ω sq–1 (40)
    film thickness: 6 nm    
          
MWCNT CVD diameter: ∼15 nm sheet resistance: ∼699 Ω sq–1 (41)
    length: 250–350 μm    
          
rGO reduction of GO produced by Hummers method thickness: 10 nm electrical conductivity: 550 S cm–1 (42)
rGO reduction of GO produced by Hummers method thickness: ∼0.9 nm sheet resistance: 103 Ω sq–1 (43)
Conducting Polymer
PANI electropolymerization thickness: 5–20 μm sheet resistance: 1.3 Ω sq–1 (44)
PANI chemical oxidative polymerization thickness: ∼250 nm sheet resistance: 4.83 Ω sq–1 (45)
          
PEDOT electropolymerization thickness: ∼1 μm sheet resistance: 50 Ω sq–1 (46)
      electrical conductivity: 210 S cm–1  
          
PEDOT electropolymerization thickness: 40–50 nm electrical conductivity: 10–1 S cm–1 (47)
PEDOT:PSS chemical oxidative polymerization thickness: 40–50 nm electrical conductivity: 10–3 S cm–1  
          
Ppy electropolymerization thickness: 6.5 μm electrical conductivity: 59.53 S cm–1 (48)
Ppy chemical oxidative polymerization particle diameter: ∼40 nm sheet resistance: 6.5 Ω sq–1 (49)