| Piezoelectric |
| PES (substrate),
PdAu or ITO (top electrode), ZnO nanorods
(piezomaterials) |
|
current density, 1 μA
cm–2 (at load
0.9 kgf, ITO); current density, 10 μA cm–2 (at load 0.9 kgf, PdAu) |
70% |
|
(809) |
| PET (substrate), ITO (electrode), GQDs/PVDF-HFP (piezomaterials) |
|
6 V, 25 nA (at load 1 kgf) |
|
80, 100 mV (hand movement, breathing condition) |
(810) |
| ITO/PET (substrate, bottom electrode), Zn2SiO4 nanorods/NR-PDMS (piezomaterials), graphene (top
electrode) |
piezoelectric charge coefficient: 117 p.m.
V–1, average energy conversion efficiency, 29.10% |
5.5 V, 0.50 μA cm–2 (at load 0.15 kgf) |
|
2.35 V, 13
nA cm–2 (bending condition) |
(811) |
| PVDF-TrFE/SWCNTs (piezo-materials),
Cr/Au (electrode) |
power
density: 20 mW cm–3 (at load resistance 1 MΩ), no notable decrease in energy harvesting
capability under 10000 cycles |
maximum 2.0 V (recycled
device) at input impedance 20 MΩ
(finger pinching), maximum 1.2 μA (recycled device) at input
impedance 10 kΩ (finger pinching) |
|
bendable |
(812) |
| h-BN/ZnO nanorods array/h-BN sandwich,
Cu paper (electrode),
ZnO nanorods array/PDMS (piezomaterials), CuNWs (electrode), PET (substrate) |
power density: 169 mW cm–3 (at load resistance 30 MΩ, with h-BN), 0.1313 mW cm–3
|
5 V, short-current:
18 μA (bending, with h-BN sandwiched
ZnO nanoarray), 2.1 V, 0.5 μA |
46% |
bendable |
(813) |
| Triboelectric |
| silicon rubber/PVA
gel (ionic current collector), VHB (substrate) |
power
density: 40 μW cm–2(at load resistance
1 MΩ, ∼10 N, 4 Hz) |
open-circuit voltage, 50 V, current: 6.5 μA cm–2; charge transfer density, 17 nC cm–2 (10 N, 4 Hz) |
92% |
tensile strain,
700%; stretching cycles, 500 |
(681) |
| PDMS or VHB (elastomer),
PAAm hydrogel/LiCl (ionic conductor,
electrode), PDMS or VHB (elastomer) |
power density: 35 mW cm–2 (at load resistance 70
MΩ, 100 kPa, 1.5 Hz) |
open-circuit voltage, 145 V, current 1.5 μA cm–2; charge, 47 nC (100 kPa, 1.5 Hz) |
96.2% |
tensile
strain: 1160% |
(814) |
| ionogel (electrode, friction layer
1), PDMS (friction layer
2), ionogel (electrode, friction layer 1), PDMS (packaging) |
maximum sensitivity: 1.76 V N–1 (range 0.1–1 N, at strain 50%) |
open-circuit voltage, 0.3 V; current,
2.3 nA (0.1 N, 1 Hz,
contact area diameter 11.5 mm) |
83% |
tensile strain: 80% (no change in sensitivity) |
(815) |
| PDMS/zwitterionic network hydrogel (ionic conductor),
PDMS |
power density: 209 mW cm–2 (at load resistance 30 MΩ) |
open-circuit
voltage, 123 V; current, 5.1 μA; charge,
42 nC (contact area 40 × 50 mm2) |
98.1% |
areal strain: 1600% |
(816) |
| PVC gel (active material, conducting layer) |
power
density: 8.7 μW cm–2 (at load
resistance 500 MΩ) |
open-circuit voltage, 24.7
V; current, 0.83 μA (50 kPa,
5 Hz, contact area 20 × 20 mm2) |
91% |
tensile strain: 250%, |
(817) |
| Thermoelectric |
| Cu iodide (thermoelectric materials), Au (electrode),
PET (substrate) |
thermoelectric figure of merit ZT, 0.23
(at 300 K); power density,
2.4 mW cm–2 (at del T: 50 K) |
power
output: 8.2 nW (at del T: 10.8K) |
60–85% |
bending cycles: 400,
(resistance change <0.2% under bending
angle of 90° |
(818) |
| donor-doped ZnO/mica (thermoelectric materials) |
power
factor: 1 × 10–4 W m–1 K–2
|
|
|
bending cycles: 100
(radius 14 mm, without crack and change
in Seebeck coefficient) |
(819) |
| CuI (thermoelectric
materials, p-type), gallium doped ZnO (thermoelectric
materials, n-type), ITO (conductive electrode for series connection),
Kapton (substrate) |
thermoelectric figure of merit ZT,
0.29; power factor, 4.7 × 10–4 W m–1 K–2
|
short-circuit current, 0.29 μA;
maximum output voltage,
0.43 mV, (at del T: 5 °C); power output, 0.41
nW (at del T: 20 °C) |
>70% (CuI film, p-type), >80% (GZO, n-type) |
CuI film-bending cycle, 100 (resistance change <10%); GZO
film-cracks in films at bending |
(820) |
