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. 2023 Aug 5;123(16):9982–10078. doi: 10.1021/acs.chemrev.3c00139

Table 2. Distinctive Properties of Representative Semiconducting Materials.

materials device semiconducting properties ref
Metal Oxides
ZnO (thin film) thin film transistor (dielectric, SiO2/substrate, PI) mobility: 0.35 cm2 V–1 S–1 (287)
    on/off ratio: ∼106  
          
ZnO (thin film) thin film transistor (dielectric, Al2O3/substrate, PET) mobility: 37.1 cm2 V–1 S–1 (288)
    on/off ratio: ∼107  
          
ZnO (thin film) thin film transistor (dielectric, Al2O3/substrate, PEN) mobility: 11.56 cm2 V–1 S–1 (289)
    on/off ratio: ∼108  
          
ZnO (thin film) thin film transistor(dielectric, SiO2/substrate, PDMS) mobility: 1.3 cm2 V–1 S–1 (290)
    on/off ratio: ∼106  
          
ZnO (thin film) thin film transistor (dielectric, PMMA/substrate:, PET) mobility: 7.53 cm2 V–1 S–1 (291)
    on/off ratio: ∼104  
          
ZnO NPs gas sensor (target gas: NO2) sensing range: 0.5–5 ppm (292)
    response/recovery times = 5/2.5 min (at 1 ppm)  
    ΔR/R = 208.5 (at 1 ppm)  
    working temperature: 150 °C  
          
ZnO NPs gas sensor (target gas: CO) sensing range: 5–25 ppm (293)
    ΔI/I = 0.06 (at 25 ppm)  
    working temperature: room T  
          
ZnO NWs gas sensor (target gas: NH3) sensing range: 1–1000 ppm (294)
    response/recovery times = 88/65 s (at 50 ppm)  
    ΔR/R = 20 (at 50 ppm)  
    working temperature: room T  
          
IGZO thin film transistor (dielectric, SiO2/substrate, PI) mobility: 19.6 cm2 V–1 S–1 (295)
    on/off ratio: ∼109  
          
IGZO thin film transistor (dielectric, Al2O3/ substrate, PES) mobility: 71.8 cm2 V–1 S–1 (296)
    on/off ratio: ∼108  
          
IGZO thin film transistor (dielectric, Al2O3/ substrate, PI) mobility: 5.41 cm2 V–1 S–1 (297)
    on/off ratio: ∼108  
          
In2O3 (thin film) thin film transistor (dielectric, Al2O3/substrate, PI) mobility: 2.83 cm2 V–1 S–1 (298)
    on/off ratio: ∼106  
          
In2O3 NWs gas sensor (target gas: NO2) sensing range: 0.01–10 ppm (299)
    response/recovery times = 200/20 s (at 5 ppm)  
    ΔR/R = 740 (at 5 ppm)  
    working temperature: room T  
          
In2O3 NWs gas sensor (target gas: NO2) sensing range: 0.01–0.5 ppm (300)
    ΔR/R = 5.52 (at 0.5 ppm)  
    working temperature: room T  
          
In2O3 nanosheets gas sensor (target gas: NO2) sensing range: 1–50 ppm (301)
    response/recovery times = 5/14 s (at 50 ppm)  
    ΔR/R = 164 (at 50 ppm)  
    working temperature: 250 °C  
          
NiOx (doped with 5% Li) thin film transistor (dielectric, ZrO2/substrate, PET) mobility: 1.41 cm2 V–1 S–1 (302)
    on/off ratio: ∼105  
          
NiOx (doped with 5% Cu) thin film transistor (dielectric, ZrO2/substrate, ITO) mobility: 1.5 cm2 V–1 S–1 (303)
    on/off ratio: ∼104  
          
NiO NPs temperature sensor sensing range: 25–70 °C (304)
    temperature coefficient of resistance: –9.2% °C–1 (at RT)  
TMDCs
MoS2 thin film transistor (dielectric, -/substrate: SiO2/Si) mobility: 1.2 cm2 V–1 S–1 (305)
    on/off ratio: ∼106  
          
MoS2 thin film transistor (dielectric, HfO2/substrate, PET) mobility: 13.9 ± 2 cm2 V–1 S–1 (306)
    on/off ratio: ∼105  
          
MoS2 thin film transistor (dielectric, SiO2/substrate, PET) mobility: 12.24 cm2 V–1 S–1 (307)
    on/off ratio: ∼106  
          
MoS2 thin film transistor (dielectric, Al2O3/substrate, PET) mobility: ∼55 cm2 V–1 S–1 (308)
    on/off ratio: ∼1010  
          
MoS2 textile sensor (strain) sensing range: –1.98% to 1.98% (309)
    GF: –72.5 ± 1.9 (sompressive)/–56.5 ± 4.8 (tensile) (pressure)  
    sensing range: 0–100 kPa  
    sensing limit: ΔP = 1.24 kPa  
    resistance change: 2.03% (ΔP = 1.24kPa)/9.78% (ΔP = 20 kPa) (temperature)  
    sensing range: 30–40 °C  
    temperature coefficient of resistance: 14.2% °C–1 (at RT)  
          
MoS2 gas sensor (target gas: NH3, NO2) (NO2) sensing range: 25–500 ppm (310)
    ΔI/I = 97% (at 25 ppm)  
    working temperature: room T  
    (NH3) sensing range: 25–500 ppm  
    ΔI/I = ∼−5% (at 25 ppm)  
          
MoSe2 thin film transistor (dielectric, SU-8/substrate, PI) mobility: ∼121 cm2 V–1 S–1 (311)
    on/off ratio: ∼104  
          
MoSe2 pressure sensor sensing range: 0.001–100 kPa (312)
    sensitivity (ΔI/I kPa–1): 18.42 (0.001–0.5 kPa)/7.28 (1–35 kPa)/2.63 (40–100 kPa)  
          
MoSe2 gas sensor (target gas: NH3, NO2) (NO2) sensing range: 2–10 ppm (313)
    response/recovery times = 250/150 s  
    ΔI/I = ∼100% (at 10 ppm)  
    working temperature: room T  
    (NH3) sensing range: 5–25 ppm  
    ΔI/I = ∼100% (at 25 ppm)  
          
WSe2 gas sensor (target gas: NH3, NO2) (NO2) sensing range: 0.12–5 ppm (314)
    ΔR/R = ∼−25% (at 1 ppm)  
    (NH3) sensing range: 0.12–5 ppm  
    ΔR/R = ∼2% (at 1 ppm)  
          
WSe2 gas sensor (target gas: NO2) sensing range: 0.05–10 ppm (315)
    limit of detection: 0.05 ppm  
    ΔR/R = 11.01 (at 10 ppm)  
    working temperature: room T  
          
WSe2 gas sensor (target gas: NO2) sensing range: 0.05–10 ppm (316)
    limit of detection: 0.008 ppm  
    ΔR/R = 5.36 (at 10 ppm)  
    working temperature: room T  
Organic Semiconductors
pentacene OFET mobility: 2.5 cm2 V–1 S–1 (317)
on/off ratio: ∼107
 
TIPS-pentacene OFET mobility: 4.59 cm2 V–1 S–1 (318)
    on/off ratio: ∼107  
          
diF-TES-ADT OFET mobility: 6.7 cm2 V–1 S–1 (319)
    on/off ratio: ∼106  
          
DNTT OFET mobility: 1.38 cm2 V–1 S–1 (320)
C10-DNTT   mobility: 1.08 cm2 V–1 S–1  
DPh-DNTT   mobility: 0.36 cm2 V–1 S1–  
          
C8–BTBT OFET           mobility: 2.21 cm2 V–1 S–1 (320)
DPh-BTBT   mobility: 1.19 cm2 V–1 S–1  
          
DNTT OFET mobility: 9.9 cm2 V–1 S–1 (321)
          
p3HT OFET mobility: 8.0 cm2 V–1 S–1 (322)
    on/off ratio: ∼103  
          
(DPP based) PDBPyBT OFET mobility (electron): 6.30 cm2 V–1 S–1 (323)
    mobility (hole): 2.78 cm2 V–1 S–1  
    on/off ratio: ∼103  
          
(DPP based) P-29-DPPDBTE (dielectric: octadecyltri-chlorosilane (OTS)-modified SiO2) OFET mobility (hole): 10.54 cm2 V–1 S–1 (324)
    on/off ratio: ∼106