Ultrathin
Film Deposition |
PVD |
ultrathin
metal |
88.40% |
sheet resistance: 18.6 Ω sq–1
|
|
(79) |
PVD |
rGO |
97% |
resistivity: 30.3 mΩ cm |
|
(490) |
CVD |
graphene |
84% |
sheet resistance: 600 Ω sq–1
|
|
(182) |
CVD |
MoS2
|
89.2% |
mobility: 0.07 cm2 V–1s–1 @ RT |
|
(407) |
ALD |
Pt doping on graphene |
93.40% |
sheet resistance: 86.8 Ω sq–1
|
|
(491) |
|
transfer |
ultrathin film transfer |
85% |
mobility: 0.1 cm2 V–1 s–1
|
|
(492) |
|
|
|
sheet resistance: 100 Ω sq–1
|
|
|
Random Percolation
Networks |
spin-coating |
AgNW |
90.70% |
sheet resistance: 8.6 Ω sq–1
|
σdc/σop: 600 |
(493) |
spin-coating |
CNT |
71% |
sheet resistance: 59 Ω sq–1
|
σdc/σop: 17 |
(494) |
spin-coating |
PEDOT:PSS |
96.10% |
conductivity: 2084 S cm–1
|
σdc/σop: 185.2 |
(495) |
spray coating |
PEDOT:PSS |
90% |
conductivity: 936 S cm–1
|
σdc/σop: 39 |
(496) |
spray coating |
AgNW |
90% |
sheet resistance: 47 Ω sq–1
|
σdc/σop: 415 |
(497) |
spray coating |
graphene, PEDOT:PSS |
90% |
sheet resistance: 1200 Ω sq–1
|
|
(286) |
vacuum filtration transfer |
AuNW |
83% |
sheet resistance: 49 Ω sq–1
|
σdc/σop: 54 |
(498) |
electrospinning |
metal nanotrough |
90% |
sheet resistance: 2 Ω sq–1
|
|
(499) |
electrospinning |
Cu |
90% |
sheet resistance: 50 Ω sq–1
|
T10/Rs: 11 × 10–3 Ω–1
|
(500) |
Grid Patterning |
nanoimprinting |
AuNW |
92%, pattern resolution: 250 nm |
sheet resistance: 227 Ω sq–1
|
|
(501) |
nanoimprinting |
Ni |
75%, pattern resolution: 4 μm |
sheet resistance: 0.036 Ω sq–1
|
σdc/σop: 3.4 × 104
|
(502) |
nanoimprinting |
Metal |
83.1%, pattern resolution: 210 nm |
sheet resistance: 9.8 Ω sq–1
|
σdc/σop: 198.3 |
(503) |
nanoimprinting |
Ag |
91.10% |
sheet resistance: 8.2 Ω sq–1
|
σdc/σop: 350–1000 |
(504) |
laser ablation |
Cu |
83% |
sheet
resistance: 17.48 Ω sq–1
|
σdc/σop: 109.74 |
(505) |
laser sintering |
AgNP |
91%, pattern resolution: 12 μm |
sheet resistance: 22 Ω sq–1
|
|
(27) |
laser sintering |
AgNP |
85%,
pattern resolution: 20 μm |
|
|
(506) |
inkjet |
AgNP |
78.2%, pattern resolution: 10 μm |
sheet resistance ∼3.8 Ω sq–1
|
|
(507) |
inkjet |
AgNP |
85%, pattern resolution: 1.6 μm |
resistivity: 1.67 × 10–6 Ω m |
|
(508) |